NSN 5961-01-286-3649
Part Details | TRANSISTOR
5961-01-286-3649 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 700417, JANTXV2N6650, 700417, 5961-01-286-3649, 01-286-3649, 5961012863649, 012863649
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 30, 1988 | 01-286-3649 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-286-3649
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 700417 | 19059 | DATAMETRICS CORPORATION |
| JANTXV2N6650 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 700417 | 09BZ2 | RUGGED INFORMATION TECHNOLOGYEQUIPMENT CORPORATION |
Technical Data | NSN 5961-01-286-3649
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | HARDNESS CRITICAL ITEM; DESTRUCTIVE PHYSICAL ANALYSIS PER CAGE 19059,DWG 700439,SECTION 6 |