NSN 5961-01-299-8456

Part Details | TRANSISTOR

5961-01-299-8456 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6659, T235A3312, T235A331-2, T235A3312, T235A331-2, T235A3312, T235A331-2, T235A3312, T235A331-2, 5961-01-299-8456, 01-299-8456, 5961012998456, 012998456

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 07, 198901-299-845620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-299-8456
Part Number Cage Code Manufacturer
2N665980131ELECTRONIC INDUSTRIES ASSOCIATION
T235A331-213715FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP
T235A331-214099SEMTECH CORPORATION
T235A331-217856SILICONIX INCORPORATEDDIV SILICONIX
T235A331-278711TELEPHONICS CORPORATIONDBA COMMUNICATIONS SYSTEMS DIVISION
Technical Data | NSN 5961-01-299-8456
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAG35.0 MAXIMUM AND C5.0 MAXIMUM AND C0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACAD2.00 AMPERES NOMINAL AND BACBS2.00 MILLIAMPERES NOMINAL AND BACBW100.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAG8.33 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN150.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE DRAIN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-39
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED BURN IN AND ELECTROSTATIC SENSITIVE