NSN 5961-01-299-9818
Part Details | TRANSISTOR
5961-01-299-9818 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 3N204, 615238906, 615238-906, 5961-01-299-9818, 01-299-9818, 5961012999818, 012999818
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 09, 1989 | 01-299-9818 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-299-9818
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 3N204 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 615238-906 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-299-9818
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW30.0 MAXIMUM AND CAX25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD50.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG1.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | SOURCE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 37695-615238 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | RT-1168B |