NSN 5961-01-300-4973
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-300-4973 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19020569, 1902-0569, DMS 88043B, SZ12395H, SZ11489, SV7570, 19020569, 1902-0569, 7618150P1, 7618150P0001, JANTX1N941B, MILS19500157, MIL-S-19500/157, MILPRF19500157, MIL-PRF-19500/157, JTX1N941, JANTX1N941B1, JANTX1N941B-1, 1N941, 5961-01-300-4973, 01-300-4973, 5961013004973, 013004973
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 14, 1989 | 01-300-4973 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-300-4973
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1902-0569 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| DMS 88043B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| SZ12395H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SZ11489 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SV7570 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1902-0569 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 7618150P1 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
| 7618150P0001 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
| JANTX1N941B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/157 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/157 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JTX1N941 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N941B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N941 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-300-4973
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET11.7 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS7.500 MILLIAMPERES NOMINAL AND BACEA39.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | VOLTAGE REFERENCE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |
| TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 157 GOVERNMENT SPECIFICATION |