NSN 5961-01-306-1913
Part Details | TRANSISTOR
5961-01-306-1913 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IRF630, IRF630, 5961-01-306-1913, 01-306-1913, 5961013061913, 013061913
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 19, 1989 | 01-306-1913 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-306-1913
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRF630 | 59993 | INTERNATIONAL RECTIFIER CORPORATIONUse CAGE Code 81483 for cataloging |
| IRF630 | 0LCA7 | VISHAY INTERTECHNOLOGY INC ELECTRICCOMPONENTS GROUP |
Technical Data | NSN 5961-01-306-1913
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A00.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AACAD9.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG74.0 WATTS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL LENGTH | 0.530 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.600 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.180 INCHES MAXIMUM |
| OVERALL WIDTH | 0.415 INCHES MAXIMUM |