NSN 5961-01-307-2559
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-01-307-2559 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: MB11A06V60, 5961-01-307-2559, 01-307-2559, 5961013072559, 013072559
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 08, 1989 | 01-307-2559 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 1 PHASE
Cross Reference | NSN 5961-01-307-2559
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MB11A06V60 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-01-307-2559
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 REPETITIVE PEAK REVERSE VOLTAGE |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | ADQ6.00 AMPERES AND ADW125.00 AMPERES |
| MOUNTING METHOD | UNTHREADED HOLE |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 1 PHASE |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| OVERALL LENGTH | 0.760 INCHES MAXIMUM |
| OVERALL WIDTH | 0.760 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.255 INCHES MAXIMUM |