NSN 5961-01-307-5349
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-307-5349 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N41501, JANTX1N4150-1, 04ES0551, 04ES055-1, 99162309, 99162309, 99162309, 99162309, 5961-01-307-5349, 01-307-5349, 5961013075349, 013075349
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 13, 1989 | 01-307-5349 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-307-5349
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX1N4150-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 04ES055-1 | 24587 | RAYTHEON COESD LONG ISLAND DIV |
| 99162309 | 94404 | RAYTHEON COMPANYDBA RAYTHEON |
| 99162309 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 99162309 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 99162309 | F6481 | THALES SA |
Technical Data | NSN 5961-01-307-5349
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBH75.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC300.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | ELECTROSTATIC SENSITIVE DEVICE |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | COUNTERMEASURES |