NSN 5961-01-309-6859
Part Details | TRANSISTOR
5961-01-309-6859 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 8300033001, 83-00033-001, IRFJ440, 5961-01-309-6859, 01-309-6859, 5961013096859, 013096859
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 21, 1989 | 01-309-6859 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-309-6859
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 83-00033-001 | 21562 | GENERAL DYNAMICS OTS (AEROSPACE),INC. |
| IRFJ440 | 59993 | INTERNATIONAL RECTIFIER CORPORATIONUse CAGE Code 81483 for cataloging |
Technical Data | NSN 5961-01-309-6859
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX500.0 MAXIMUM AND CAW500.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD6.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG70.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.092 INCHES MINIMUM AND 1.131 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.750 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |