NSN 5961-01-312-1186
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-312-1186 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: SD101C, 09973304, 0997-3304, SD101C, 5961-01-312-1186, 01-312-1186, 5961013121186, 013121186
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 10, 1989 | 01-312-1186 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-312-1186
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SD101C | 15238 | ITT SEMICONDUCTORSA DIVISION OF INTERNATIONAL |
| 0997-3304 | 6Z539 | MTE CORP |
| SD101C | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-312-1186
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CED40.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCF2.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |