NSN 5961-01-312-6779
Part Details | TRANSISTOR
5961-01-312-6779 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 503200007, 2SB434, 5961-01-312-6779, 01-312-6779, 5961013126779, 013126779
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 21, 1989 | 01-312-6779 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-312-6779
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 503200007 | 62614 | GRAPHTEC AMERICA, INC. |
| 2SB434 | S5339 | TOSHIBA SYOUJI |
Technical Data | NSN 5961-01-312-6779
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AACAC3.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG25.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.381 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 1.145 INCHES NOMINAL |
| OVERALL HEIGHT | 0.165 INCHES NOMINAL |
| OVERALL WIDTH | 0.400 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| END ITEM IDENTIFICATION | 6625-01-230-7325 RECORDER,TAPE |