NSN 5961-01-313-4449

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-313-4449 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 20036471, 2003647-1, 20036471, 2003647-1, HRSCAJ4, 5961-01-313-4449, 01-313-4449, 5961013134449, 013134449

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 09, 199001-313-444962108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-313-4449
Part Number Cage Code Manufacturer
2003647-112705BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
2003647-194117BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC.
HRSCAJ414099SEMTECH CORPORATION
Technical Data | NSN 5961-01-313-4449
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 PEAK INVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG2.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.765 INCHES MAXIMUM
OVERALL WIDTH0.765 INCHES MAXIMUM
OVERALL HEIGHT0.300 INCHES MAXIMUM