NSN 5961-01-313-6122

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-313-6122 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 723270, KBP10ME4, KBP10M-E4, KBP10M, KBP10M, FWL 1000, KBP10M, 5961-01-313-6122, 01-313-6122, 5961013136122, 013136122

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 12, 199001-313-612262108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-313-6122
Part Number Cage Code Manufacturer
72327089536FLUKE CORPORATION
KBP10M-E414936GENERAL SEMICONDUCTOR INC
KBP10M14936GENERAL SEMICONDUCTOR INC
KBP10M2D085NEW JERSEY SEMI-CONDUCTOR PRODUCTSINC
FWL 100021845SOLITRON DEVICES, INC.
KBP10MF4022VISHAY GENERAL SEMICONDUCTOR SAS
Technical Data | NSN 5961-01-313-6122
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC1000.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG1.50 AMPERES
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
OVERALL LENGTH0.580 INCHES MAXIMUM
OVERALL WIDTH0.750 INCHES MAXIMUM
OVERALL HEIGHT0.300 INCHES MAXIMUM