NSN 5961-01-314-5731

Part Details | TRANSISTOR

5961-01-314-5731 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: SS202581F, SS20258-1-F, SS20258, IRF521, IRF521, IRF521, IRF521, IRF521, IRF521, IRF521, 5961-01-314-5731, 01-314-5731, 5961013145731, 013145731

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 01, 199001-314-573120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-314-5731
Part Number Cage Code Manufacturer
SS20258-1-FU2290BAE SYSTEMS INTEGRATED SYSTEMTECHNOLOGIES LTD
SS20258U2290BAE SYSTEMS INTEGRATED SYSTEMTECHNOLOGIES LTD
IRF52107263FAIRCHILD SEMICONDUCTOR CORP
IRF52104713FREESCALE SEMICONDUCTOR, INC.
IRF52181483INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R
IRF5211MY79INTERSIL COMMUNICATIONS INC.
IRF52134371INTERSIL CORPORATIONDIV NA
IRF52112969MICRO USPD INC
IRF52117856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-01-314-5731
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAG80.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACBR8.00 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAG40.0 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN150.0 DEG CELSIUS
INCLOSURE MATERIAL PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220AB
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 PIN
OVERALL LENGTH0.705 INCHES NOMINAL
OVERALL HEIGHT0.546 INCHES NOMINAL
OVERALL WIDTH0.400 INCHES NOMINAL