NSN 5961-01-316-0502
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-316-0502 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MA454952, MA45495-2, 20101088002, 20-101088-002, 2001088002, 20-01088-002, 5961-01-316-0502, 01-316-0502, 5961013160502, 013160502
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 02, 1990 | 01-316-0502 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-316-0502
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MA45495-2 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 20-101088-002 | 50101 | MICROSEMI CORP-MASSACHUSETTSDBA MICROSEMI-LOWELL |
| 20-01088-002 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-316-0502
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDH30.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| TERMINAL TYPE AND QUANTITY | 2 RIBBON |
| OVERALL LENGTH | 0.102 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.118 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | VARACTOR DIODE |
| TEST DATA DOCUMENT | 00724-20-01088 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| PRECIOUS MATERIAL AND LOCATION | LEADS PLATED GOLD |