NSN 5961-01-316-0996
Part Details | TRANSISTOR
5961-01-316-0996 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: V11364, VN0106N9 H372, VN0106N3, A3042115, 5961-01-316-0996, 01-316-0996, 5961013160996, 013160996
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 02, 1990 | 01-316-0996 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-316-0996
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| V11364 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VN0106N9 H372 | 59640 | SUPERTEX INC. |
| VN0106N3 | 59640 | SUPERTEX INC. |
| A3042115 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-01-316-0996
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW60.0 MAXIMUM AND CAX60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF0.31 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |