NSN 5961-01-319-0479
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-319-0479 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: CR6CM12, CR6CM-12, 5961-01-319-0479, 01-319-0479, 5961013190479, 013190479
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 30, 1990 | 01-319-0479 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-319-0479
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CR6CM-12 | 66844 | POWEREX, INC |
Technical Data | NSN 5961-01-319-0479
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDC600.0 MAXIMUM AND CDD720.0 MAXIMUM AND CD+600.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACDS9.40 AMPERES NOMINAL AND DQ6.00 AMPERES NOMINAL AND AACFG90.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAE5.0 WATTS AND ATAAQ0.5 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 12.5 MILLIMETERS MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 16.0 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 4.5 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 10.5 MILLIMETERS NOMINAL |