NSN 5961-01-321-1918
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-321-1918 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 5544020, DT2035, DT-2035, 1N937B, 1N937B, DT900209D, 5544020, 5961-01-321-1918, 01-321-1918, 5961013211918, 013211918
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 13, 1990 | 01-321-1918 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-321-1918
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5544020 | 50273 | AMERICAN POWER DEVICES INC |
| DT-2035 | 55801 | COMPENSATED DEVICES INC |
| 1N937B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N937B | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| DT900209D | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 5544020 | 53711 | NAVAL SEA SYSTEMS COMMAND |
Technical Data | NSN 5961-01-321-1918
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET9.0 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M1.0/P1.0 |
| CURRENT RATING PER CHARACTERISTIC | BACEA50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM |