NSN 5961-01-325-2179
Part Details | SEMICONDUCTOR DEVICE RECTIFIER
5961-01-325-2179 Two or more interconnected SEMICONDUCTOR DEVICE (1), DIODE arranged in stack(s) for use in power supplies to change alternating current to direct current. For items containing material such as selenium or copper oxide, see RECTIFIER, METALLIC.
Alternate Parts: 652937, 652-937, 9259881B, 925988-1B, SA4870, 5961-01-325-2179, 01-325-2179, 5961013252179, 013252179
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 30, 1990 | 01-325-2179 | 00300 ( RECTIFIER, SEMICONDUCTOR DEVICE ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 1 PHASE
Cross Reference | NSN 5961-01-325-2179
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 652-937 | 12969 | MICRO USPD INC |
| 925988-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| SA4870 | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-01-325-2179
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 REVERSE VOLTAGE, DC |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | ACG1.00 AMPERES |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 1 PHASE |
| OPERATING TEMP RANGE | -55.0 TO +150.0 DEG CELSIUS |
| OVERALL LENGTH | 0.650 INCHES MAXIMUM |
| OVERALL WIDTH | 0.500 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.210 INCHES MAXIMUM |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES SILVER |