NSN 5961-01-326-0627
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-326-0627 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 300PA120, T620123004DN, T620-12-30-0-4-DN, 5961-01-326-0627, 01-326-0627, 5961013260627, 013260627
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 17, 1990 | 01-326-0627 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-326-0627
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 300PA120 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| T620-12-30-0-4-DN | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-01-326-0627
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CD+1200.0 MAXIMUM AND CDC1200.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACDS470.00 AMPERES NOMINAL AND DQ300.00 AMPERES NOMINAL AND DG150.00 MILLIAMPERES NOMINAL |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 CASE AND 1 PIN AND 1 QUICK DISCONNECT, MALE |
| OVERALL LENGTH | 0.555 INCHES NOMINAL |
| OVERALL DIAMETER | 1.625 INCHES NOMINAL |