NSN 5961-01-326-3630

Part Details | TRANSISTOR

5961-01-326-3630 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: MTP5N40, RFP7N40, 18550606, 1855-0606, MTP5N40, 18550606, 1855-0606, MTP5N40, RFP7N40, MTP5N40E, MTP5N40E, 5961-01-326-3630, 01-326-3630, 5961013263630, 013263630

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 22, 199001-326-363020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-326-3630
Part Number Cage Code Manufacturer
MTP5N4004713FREESCALE SEMICONDUCTOR, INC.
RFP7N4003508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
1855-060628480HEWLETT-PACKARD COMPANYDBA HP
MTP5N4034371INTERSIL CORPORATIONDIV NA
1855-06061LQK8KEYSIGHT TECHNOLOGIES, INC.
MTP5N4012969MICRO USPD INC
RFP7N4066844POWEREX, INC
MTP5N40E3V146ROCHESTER ELECTRONICS, LLC
MTP5N40E1MQ07SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC
Technical Data | NSN 5961-01-326-3630
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICBAJ400.0 MINIMUM
CURRENT RATING PER CHARACTERISTICCKCBR250.00 MICROAMPERES AND HTCBW500.00 NANOAMPERES
POWER RATING PER CHARACTERISTICATCAG75.0 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN150.0 DEG CELSIUS
INCLOSURE MATERIAL PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220AB
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.593 INCHES NOMINAL
OVERALL HEIGHT0.187 INCHES NOMINAL
OVERALL WIDTH0.375 INCHES NOMINAL