NSN 5961-01-329-7575
Part Details | TRANSISTOR
5961-01-329-7575 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: G2250601, G225060-1, G2250601, G225060-1, G2250601, G225060-1, 5961-01-329-7575, 01-329-7575, 5961013297575, 013297575
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 22, 1990 | 01-329-7575 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-329-7575
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| G225060-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G225060-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G225060-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-329-7575
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL LENGTH | 1.510 INCHES MINIMUM AND 1.550 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.690 INCHES MINIMUM AND 0.780 INCHES MAXIMUM |
| OVERALL WIDTH | 0.980 INCHES MINIMUM AND 1.050 INCHES MAXIMUM |
| SPECIAL FEATURES | HARDNESS CRITICAL |
| END ITEM IDENTIFICATION | AN/USC-38(V) EHF SATCOM TERMINAL |