NSN 5961-01-330-5435
Part Details | TRANSISTOR
5961-01-330-5435 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 8256289491, 8256289-491, U291Q8B, U291-Q8B, U291, FN5288, 5961-01-330-5435, 01-330-5435, 5961013305435, 013305435
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 05, 1990 | 01-330-5435 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-330-5435
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 8256289-491 | 0CAM9 | OPTICAL STORAGE SYSTEMSDEFENSE AVIONICS SYSTEMS DIV |
| U291-Q8B | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| U291 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| FN5288 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-330-5435
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD1.50 AMPERES NOMINAL AND BACAK100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-52 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |