NSN 5961-01-332-8082
Part Details | TRANSISTOR
5961-01-332-8082 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 941373, 94-1373, UFNH1000, H980067001B, H980067-001B, 5961-01-332-8082, 01-332-8082, 5961013328082, 013328082
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 17, 1991 | 01-332-8082 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-332-8082
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 94-1373 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| UFNH1000 | 12969 | MICRO USPD INC |
| H980067-001B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-332-8082
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAG100.0 MAXIMUM AND C00.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD30.00 AMPERES NOMINAL AND AACCY120.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG150.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-61 |
| MOUNTING METHOD | TERMINAL AND THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL LENGTH | 0.315 INCHES MINIMUM AND 0.415 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.747 INCHES MINIMUM AND 0.915 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |