NSN 5961-01-332-8083
Part Details | TRANSISTOR
5961-01-332-8083 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 65627801, 656278-01, BUZ54A, 5961-01-332-8083, 01-332-8083, 5961013328083, 013328083
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 17, 1991 | 01-332-8083 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-332-8083
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 656278-01 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| BUZ54A | 0B549 | SIEMENS COMPONENTS INCINTEGRATED CIRCUIT DIV |
Technical Data | NSN 5961-01-332-8083
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX1000.0 MAXIMUM AND CAW1000.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCY18.00 AMPERES NOMINAL AND AACAD2.90 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG125.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.510 INCHES MINIMUM AND 1.550 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.326 INCHES MAXIMUM |
| OVERALL WIDTH | 1.005 INCHES MINIMUM AND 1.099 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |