NSN 5961-01-333-2230

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-333-2230 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 19011108, 1901-1108, 83A02601, 83A0260-1, 41101203, 41-1012-03, 2339611, 233961-1, 16725801, 167258-01, 19011108, 1901-1108, 790883911, 7908839-11, 61352992, 6135299-2, UTG4047, UTG4064, UTG-4064, UTG4028, UTG-4028, UES1305, UTG4180, UTG4111, PS43034, PR1596, DSR5400X, 8037214, 803721-4, RC3532074012, RC353-2074-012, 9959502076, 995-9502-076, 3536616012, 353-6616-012, S340S7, SENR3734, SEN-R-373-4, SENR347, SEN-R-347, CR1306F, SS7691, SS7691, 117606001, 117606-001, 5961-01-333-2230, 01-333-2230, 5961013332230, 013332230

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 26, 199101-333-223020589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-333-2230
Part Number Cage Code Manufacturer
1901-110850434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
83A0260-109062CRANE ELECTRONICS, INC.
41-1012-0309062CRANE ELECTRONICS, INC.
233961-194987CUBIC DEFENSE APPLICATIONS, INC.
167258-0135351GE AVIATION SYSTEMS LLC
1901-110828480HEWLETT-PACKARD COMPANYDBA HP
7908839-1190536LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
6135299-203640LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
UTG404712969MICRO USPD INC
UTG-406412969MICRO USPD INC
UTG-402812969MICRO USPD INC
UES130512969MICRO USPD INC
UTG418012969MICRO USPD INC
UTG411112969MICRO USPD INC
PS4303432694OPTEK TECHNOLOGY, INC
PR159632694OPTEK TECHNOLOGY, INC
DSR5400X32694OPTEK TECHNOLOGY, INC
803721-496214RAYTHEON COMPANYDBA RAYTHEON
RC353-2074-01213499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
995-9502-07613499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
353-6616-01213499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
S340S713409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SEN-R-373-413409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SEN-R-34713409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
CR1306F34764SCIENTIFIC RADIO SYSTEMS INC
SS769114099SEMTECH CORPORATION
SS7691SH879SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY
117606-00189022TDK-LAMBDA AMERICAS INC.DIV HIGH POWER DIVISION
Technical Data | NSN 5961-01-333-2230
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCEC400.0 MAXIMUM AND CBH400.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACFN70.00 AMPERES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN150.0 DEG CELSIUS
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.300 INCHES MAXIMUM
OVERALL DIAMETER0.180 INCHES MAXIMUM
FEATURES PROVIDED BURN IN