NSN 5961-01-334-3003
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-334-3003 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N4625, 10133478, H8000045001, H8000045-001, H8000045001, H8000045-001, H8000045001, H8000045-001, 5961-01-334-3003, 01-334-3003, 5961013343003, 013343003
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 19, 1991 | 01-334-3003 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-334-3003
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX1N4625 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 10133478 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| H8000045-001 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| H8000045-001 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| H8000045-001 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-334-3003
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET5.1 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | BACC+1450.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |