NSN 5961-01-336-5485

Part Details | TRANSISTOR

5961-01-336-5485 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: SD215DEM, SD215DE-M, SD215DEM, SD215DE/M, SD215DE2, SD215DE-2, SD215DE02, SD215DE-02, DM1183, SD215DEM2, SD215DE-M/2, SD215DEM2, SD215DE-M/2, A3084172, 5961-01-336-5485, 01-336-5485, 5961013365485, 013365485

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 27, 199101-336-548520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-336-5485
Part Number Cage Code Manufacturer
SD215DE-M0N0K0CALOGIC LLC
SD215DE/M61837SEMI PROCESSES INC
SD215DE-217856SILICONIX INCORPORATEDDIV SILICONIX
SD215DE-0217856SILICONIX INCORPORATEDDIV SILICONIX
DM118317856SILICONIX INCORPORATEDDIV SILICONIX
SD215DE-M/262305TELMOS INC
SD215DE-M/20AEB1UNIVERSAL SEMICONDUCTOR INC
A308417280063US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS
Technical Data | NSN 5961-01-336-5485
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAX20.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAD50.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAG1.2 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN125.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED BURN IN
END ITEM IDENTIFICATION5841-01-236-8951 DETECTING SET,RADAR SIGNAL