NSN 5961-01-341-4949
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-341-4949 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1673864, 167386-4, 1673864, 167386-4, 1673864, 167386-4, DSR3200, DSR3200, DSR3200, 5961-01-341-4949, 01-341-4949, 5961013414949, 013414949
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 01, 1991 | 01-341-4949 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-341-4949
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 167386-4 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 167386-4 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 167386-4 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| DSR3200 | 32994 | SPACE ENVIRONMENT LABS |
| DSR3200 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| DSR3200 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-341-4949
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CEC200.0 MAXIMUM AND CBD1.1 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACCH80.00 MILLIAMPERES NOMINAL |
| INCLOSURE MATERIAL | GLASS AND METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-41 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.100 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.182 INCHES NOMINAL |
| OVERALL DIAMETER | 0.094 INCHES NOMINAL |