NSN 5961-01-343-3640
Part Details | TRANSISTOR
5961-01-343-3640 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 34525601, 3452560-1, BUZ50A, BUZ50A, 5961-01-343-3640, 01-343-3640, 5961013433640, 013433640
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 12, 1991 | 01-343-3640 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-343-3640
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 3452560-1 | 93346 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| BUZ50A | 59377 | MICROSEMI CORP-COLORADO |
| BUZ50A | 0B549 | SIEMENS COMPONENTS INCINTEGRATED CIRCUIT DIV |
Technical Data | NSN 5961-01-343-3640
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW1000.0 MAXIMUM AND CAX1000.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD10.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF75.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL AND PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.066 INCHES NOMINAL |
| OVERALL HEIGHT | 0.173 INCHES NOMINAL |
| OVERALL WIDTH | 0.389 INCHES NOMINAL |
| PROPRIETARY CHARACTERISTICS | NPAC |