NSN 5961-01-343-8873

Part Details | TRANSISTOR

5961-01-343-8873 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: NE41635(CX), 3521611012, 352-1611-012, 5961-01-343-8873, 01-343-8873, 5961013438873, 013438873

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 19, 199101-343-887320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-343-8873
Part Number Cage Code Manufacturer
NE41635(CX)62104CALIFORNIA EASTERN LABS
352-1611-01213499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
Technical Data | NSN 5961-01-343-8873
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAM35.0 MAXIMUM AND CA+18.0 MAXIMUM AND CBA3.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAC100.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICBZCAB290.0 MILLIWATTS
TRANSFER RATIOBAK30.0 MINIMUM AND CAK200.0 MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZL150.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.160 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.070 INCHES MAXIMUM
OVERALL DIAMETER0.099 INCHES MINIMUM AND 0.101 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED MICROWAVE
FEATURES PROVIDED HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
SPECIAL FEATURESHAZARDOUS MATERIAL: BERYLLIUM OXIDE: HANDLING PROCEDURES: DO NOT POLISH,CROSS-SECTION,GRIND OR OTHERWISE OPEN COMPONENT WITHOUT TAKING ADEQUATE SAFEGUARDS: MATERIALS CONTAINED WITHIN MAY BE INJURIOUS TO YOUR HEALTH; JUNCTION PATTERN ARRANGEMENT: NPN