NSN 5961-01-343-8887

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-343-8887 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: UTG5454, G3712511, G371251-1, G3712511, G371251-1, G3712511, G371251-1, SUES2604, 5961-01-343-8887, 01-343-8887, 5961013438887, 013438887

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 19, 199101-343-888762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

CENTER TAP 1 PHASE

Cross Reference | NSN 5961-01-343-8887
Part Number Cage Code Manufacturer
UTG545412969MICRO USPD INC
G371251-154X10RAYTHEON COMPANYDBA RAYTHEON
G371251-149956RAYTHEON COMPANYDBA RAYTHEON
G371251-13B150RAYTHEON COMPANYDBA RAYTHEON
SUES260411961SEMICON COMPONENTS INC
Technical Data | NSN 5961-01-343-8887
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 PEAK INVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG30.00 AMPERES AND ACF300.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY2 PIN
CIRCUIT CONNECTION STYLE DESIGNATOR CENTER TAP 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.573 INCHES MAXIMUM
OVERALL WIDTH1.050 INCHES MAXIMUM
OVERALL HEIGHT0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM