NSN 5961-01-349-0223
Part Details | TRANSISTOR
5961-01-349-0223 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NE88935, 5961-01-349-0223, 01-349-0223, 5961013490223, 013490223
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 19, 1991 | 01-349-0223 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-349-0223
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NE88935 | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
Technical Data | NSN 5961-01-349-0223
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAMM20.0 MAXIMUM AND CAPM12.0 MAXIMUM AND CBAM3.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| POWER RATING PER CHARACTERISTIC | BZCAF250.0 MILLIWATTS |
| TRANSFER RATIO | BAK20.0 MINIMUM AND CAK200.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 4.0 MILLIMETERS MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 10.55 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 10.55 MILLIMETERS NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |