NSN 5961-01-350-1017
Part Details | TRANSISTOR
5961-01-350-1017 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: G3398052, G339805-2, NHG3398052, NHG339805-2, H46506, SA2858, G3398052, G339805-2, G3398052, G339805-2, NFP2056, H46506, G3398052, G339805-2, G3398052, G339805-2, 5961-01-350-1017, 01-350-1017, 5961013501017, 013501017
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 10, 1991 | 01-350-1017 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-350-1017
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| G339805-2 | 0EU86 | AUSTIN SEMICONDUCTOR INCDBA MICROSS COMPONENTS |
| NHG339805-2 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| H46506 | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
| SA2858 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
| G339805-2 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| G339805-2 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| NFP2056 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| H46506 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| G339805-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G339805-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-350-1017
| Characteristic | Specifications |
|---|---|
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |