NSN 5961-01-350-4770
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-350-4770 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 11469219, 11469219, 11469219, 5961-01-350-4770, 01-350-4770, 5961013504770, 013504770
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 17, 1991 | 01-350-4770 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-350-4770
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 11469219 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 11469219 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 11469219 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-350-4770
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BER100.0 MINIMUM |