NSN 5961-01-351-6074
Part Details | TRANSISTOR
5961-01-351-6074 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 947149, 94-7149, JANTX2N6851, G2935281, G293528-1, G2935281, G293528-1, 5961-01-351-6074, 01-351-6074, 5961013516074, 013516074
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 12, 1992 | 01-351-6074 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-351-6074
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 94-7149 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| JANTX2N6851 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| G293528-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G293528-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-351-6074
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | B$E |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX200.0 MAXIMUM AND C0.0 MAXIMUM AND C.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | ATCAF25.0 WATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 SOLDER STUD |
| OVERALL LENGTH | 0.170 INCHES NOMINAL |
| OVERALL DIAMETER | 0.350 INCHES NOMINAL |