NSN 5961-01-352-1798
Part Details | TRANSISTOR
5961-01-352-1798 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: TR400029001, TR4-00029-001, JS8818AS, JS8818-AS, JS8818AS, JS8818-AS, 5961-01-352-1798, 01-352-1798, 5961013521798, 013521798
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 22, 1992 | 01-352-1798 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-352-1798
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| TR4-00029-001 | 66449 | MICROSOURCE, INC. |
| JS8818-AS | 0DV96 | TOSHIBA AMERICAN INFORMATION SYSTEMSINC |
| JS8818-AS | 61802 | TOSHIBA INTERNATIONAL CORPORATIONDBA TOSHIBA INTERNATIONAL |
Technical Data | NSN 5961-01-352-1798
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |