NSN 5961-01-352-1800
Part Details | TRANSISTOR
5961-01-352-1800 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: W41294B6200A8, W41294-B6200-A8, 300556330, VP1008M, VP1008L, 5961-01-352-1800, 01-352-1800, 5961013521800, 013521800
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 22, 1992 | 01-352-1800 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-352-1800
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| W41294-B6200-A8 | C0426 | HENSOLDT SENSORS GMBH |
| 300556330 | 5Y717 | SCHLUMBERGER TECHNOLOGIES INCAUTOMATIC TEST EQUIPMENT |
| VP1008M | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VP1008L | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-352-1800
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BAGM100.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD0.28 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF0.8 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL WIDTH | 0.145 INCHES NOMINAL |