NSN 5961-01-353-5517
Part Details | TRANSISTOR
5961-01-353-5517 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NH7555717P615, 7555717P615, SD94793, SD9-4793, 5961-01-353-5517, 01-353-5517, 5961013535517, 013535517
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 12, 1992 | 01-353-5517 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-353-5517
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NH7555717P615 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 7555717P615 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
| SD9-4793 | 6Y341 | MICROWAVE TECHNOLOGY, INC. |
Technical Data | NSN 5961-01-353-5517
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX8.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BZCAF750.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL AND CERAMIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 BONDING PAD |
| OVERALL LENGTH | 0.016 INCHES NOMINAL |
| OVERALL HEIGHT | 0.005 INCHES NOMINAL |
| OVERALL WIDTH | 0.0095 INCHES NOMINAL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |