NSN 5961-01-353-5525
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-353-5525 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: QPND4073, QPND-4073, NH7555285P601, QPND4073, QPND-4073, 7555285P601, 5961-01-353-5525, 01-353-5525, 5961013535525, 013535525
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 12, 1992 | 01-353-5525 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-353-5525
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| QPND-4073 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| NH7555285P601 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| QPND-4073 | 54893 | HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV |
| 7555285P601 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
Technical Data | NSN 5961-01-353-5525
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCT100.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | HTCCJ100.00 NANOAMPERES |
| POWER RATING PER CHARACTERISTIC | BZCAF250.0 MILLIWATTS |
| CAPACITANCE RATING IN PICOFARADS | 0.02 MAXIMUM |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 RIBBON |
| OVERALL LENGTH | 0.680 INCHES MINIMUM AND 0.720 INCHES MAXIMUM |
| SPECIAL FEATURES | HARDNESS CRITICAL PROCESS; JUNCTIN PATTERN ARRANGEMENT: PIN |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |