NSN 5961-01-356-2350
Part Details | TRANSISTOR
5961-01-356-2350 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NE71000VC GE601, NH7555161P01, 7555161P601, 7555161P0601, 5961-01-356-2350, 01-356-2350, 5961013562350, 013562350
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 31, 1992 | 01-356-2350 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-356-2350
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NE71000VC GE601 | 62104 | CALIFORNIA EASTERN LABS |
| NH7555161P01 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 7555161P601 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
| 7555161P0601 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
Technical Data | NSN 5961-01-356-2350
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX5.0 MAXIMUM AND C6.5 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD120.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 3 BONDING PAD |
| OVERALL LENGTH | 0.0177 INCHES NOMINAL |
| OVERALL WIDTH | 0.0157 INCHES NOMINAL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |