NSN 5961-01-357-4777
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-357-4777 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19021429, 1902-1429, SZG30729, 19021429, 1902-1429, SZG30729, 5961-01-357-4777, 01-357-4777, 5961013574777, 013574777
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 24, 1992 | 01-357-4777 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-357-4777
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1902-1429 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| SZG30729 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1902-1429 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| SZG30729 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
Technical Data | NSN 5961-01-357-4777
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET5.11 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M2.0/P2.0 |
| CURRENT RATING PER CHARACTERISTIC | AS2.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| OVERALL DIAMETER | 0.075 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |