NSN 5961-01-358-0219
Part Details | TRANSISTOR
5961-01-358-0219 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IRFD220, IRFD220, 5961-01-358-0219, 01-358-0219, 5961013580219, 013580219
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 06, 1992 | 01-358-0219 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-358-0219
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRFD220 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| IRFD220 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-358-0219
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX200.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD0.80 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.3125 INCHES NOMINAL |
| OVERALL HEIGHT | 0.170 INCHES NOMINAL |
| OVERALL WIDTH | 0.196 INCHES NOMINAL |