NSN 5961-01-362-5666
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-362-5666 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 891021N5819URTX, 89102-1N5819URTX, 891021N5819URTX, 89102-1N5819URTX, 5961-01-362-5666, 01-362-5666, 5961013625666, 013625666
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 09, 1992 | 01-362-5666 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-362-5666
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 89102-1N5819URTX | 55801 | COMPENSATED DEVICES INC |
| 89102-1N5819URTX | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
Technical Data | NSN 5961-01-362-5666
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDE45.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCG1.00 AMPERES NOMINAL AND AACCF25.00 AMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-213 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.189 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.094 INCHES MINIMUM AND 0.105 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | MICROWAVE |
| FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |