NSN 5961-01-363-4672
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-363-4672 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: U213118, U21-3118, U213118, U21-3118, G4046311, G404631-1, G4046311, G404631-1, G4046311, G404631-1, 5961-01-363-4672, 01-363-4672, 5961013634672, 013634672
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 29, 1992 | 01-363-4672 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-363-4672
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| U21-3118 | 26629 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN MISSILES AND |
| U21-3118 | 50101 | MICROSEMI CORP-MASSACHUSETTSDBA MICROSEMI-LOWELL |
| G404631-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G404631-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G404631-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-363-4672
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBE22.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF50.00 MILLIAMPERES NOMINAL AND HTCCH100.00 NANOAMPERES |
| POWER RATING PER CHARACTERISTIC | BZCBH250.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 RIBBON |
| OVERALL LENGTH | 0.098 INCHES NOMINAL |
| OVERALL HEIGHT | 0.050 INCHES NOMINAL |
| OVERALL WIDTH | 0.098 INCHES NOMINAL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | RIBBON TERMINAL CUT AT 45.0 DEG ANGLE IS THE CATHODE |