NSN 5961-01-363-4673
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-363-4673 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 50823042TXV, 5082-3042TXV, 50823042TXV, 5082-3042TXV, G404752, G404752, G404752, 4460450001, 446045-0001, 5961-01-363-4673, 01-363-4673, 5961013634673, 013634673
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 29, 1992 | 01-363-4673 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-363-4673
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5082-3042TXV | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 5082-3042TXV | 54893 | HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV |
| G404752 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G404752 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G404752 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 446045-0001 | 65597 | THALES DEFENSE & SECURITY, INC. |
Technical Data | NSN 5961-01-363-4673
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CFQ1.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACCH100.00 MILLIAMPERES NOMINAL |
| CAPACITANCE RATING IN PICOFARADS | 0.4 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.076 INCHES MAXIMUM |
| END ITEM IDENTIFICATION | AN/FPS-108ACD |