NSN 5961-01-364-1982
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-364-1982 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: A2X1378, A2X1378, 50826683, 5082-6683, 8455812, 845581-2, 8455811, 845581-1, 8455811, 845581-1, 5961-01-364-1982, 01-364-1982, 5961013641982, 013641982
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 14, 1992 | 01-364-1982 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-364-1982
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A2X1378 | 21847 | FEI MICROWAVE INC |
| A2X1378 | 14844 | FREQUENCY ELECTRONICS, INC. |
| 5082-6683 | 50436 | HEWLETT-PACKARD CO VIDEOCOMMUNICATION DIV |
| 845581-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 845581-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 845581-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-364-1982
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CFQ0.4 MAXIMUM AND BCT15.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | HTCCH100.00 NANOAMPERES AND BABAF20.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCBJ250.0 MILLIWATTS |
| CAPACITANCE RATING IN PICOFARADS | 1.2 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | 0$DGS0000$DME0000 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |