NSN 5961-01-364-1983
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-364-1983 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 18840334, 1884-0334, 18840334, 1884-0334, TODV 640, 5961-01-364-1983, 01-364-1983, 5961013641983, 013641983
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 14, 1992 | 01-364-1983 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-364-1983
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1884-0334 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1884-0334 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| TODV 640 | 50088 | STMICROELECTRONICS INC |
Technical Data | NSN 5961-01-364-1983
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AD+600.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | DS40.00 AMPERES NOMINAL AND DW370.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATAAE40.0 WATTS AND ATAAQ1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 0.312 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 1.687 INCHES NOMINAL |
| OVERALL HEIGHT | 1.197 INCHES NOMINAL |
| OVERALL WIDTH | 0.875 INCHES NOMINAL |
| END ITEM IDENTIFICATION | 6625-01-249-3366 |