NSN 5961-01-364-9320
Part Details | TRANSISTOR
5961-01-364-9320 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 587R892H02, 587R892H02, SG4254, 5961-01-364-9320, 01-364-9320, 5961013649320, 013649320
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 28, 1992 | 01-364-9320 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-364-9320
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 587R892H02 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
| 587R892H02 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SG4254 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-364-9320
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX25.0 MAXIMUM AND BCKM15.0 MINIMUM AND C5.0 MAXIMUM AND C0.0 MAXIMUM AND C0.0 MAXIMUM AND BCQM0.3 MINIMUM AND C5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.750 INCHES MINIMUM |
| OVERALL HEIGHT | 0.075 INCHES MINIMUM AND 0.101 INCHES MAXIMUM |
| OVERALL WIDTH | 0.390 INCHES MAXIMUM |