NSN 5961-01-381-8542
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-381-8542 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N6317D, A3084233, 5961-01-381-8542, 01-381-8542, 5961013818542, 013818542
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 23, 1993 | 01-381-8542 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-381-8542
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX1N6317D | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| A3084233 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-01-381-8542
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET5.1 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M1.0/P1.0 |
| CURRENT RATING PER CHARACTERISTIC | AS20.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 80063-A3084233 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 533 GOVERNMENT SPECIFICATION |
| END ITEM IDENTIFICATION | APR-39A |