NSN 5961-01-406-1630

Part Details | TRANSISTOR

5961-01-406-1630 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: IRFM450, 9959503038, 995-9503-038, 3528017040, 352-8017-040, 2N7228, 5961-01-406-1630, 01-406-1630, 5961014061630, 014061630

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 22, 199401-406-163020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-406-1630
Part Number Cage Code Manufacturer
IRFM45059993INTERNATIONAL RECTIFIER CORPORATIONUse CAGE Code 81483 for cataloging
995-9503-03813499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-8017-04013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
2N722817856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-01-406-1630
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAX500.0 MAXIMUM AND C0.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACAD8.00 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAG125.0 WATTS
INCLOSURE MATERIAL METAL
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY1
TERMINAL LENGTH0.530 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 PRINTED CIRCUIT
OVERALL LENGTH0.800 INCHES MAXIMUM
OVERALL HEIGHT0.260 INCHES MAXIMUM
OVERALL WIDTH0.545 INCHES MAXIMUM
SPECIAL FEATURESBERYLLIUM OXIDE INTERNAL INSULATOR - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
TEST DATA DOCUMENT13499-352-8017 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)